5 - 18 ghz high power amplifier.
n n n n n n 0.25 µm Power pHEMT Technology 5
– 18 GHz Frequency Range 2W Output Power 24 dB nominal Gain Quiescent Bias point : 8V ; 1A Chip size: 5.23 mm.
This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air.
The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. To simplify the as.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 353.03KB)