CHA6518 - 5 - 18 GHz High Power Amplifier

United Monolithic Semiconductors

CHA6518 Datasheet Preview — Preview of CHA6518 PDF

Datasheet Details

Part number	CHA6518
Manufacturer	United Monolithic Semiconductors
File Size	353.03 KB
Description	5 - 18 GHz High Power Amplifier
Datasheet	CHA6518_UnitedMonolithicSemiconductors.pdf

CHA6518 Product details

Description

The CHA6518 is a monolithic three-stage GaAs high power amplifier designed for wide band applications. the backside of the chip is both RF and DC grounded bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process.

Features

n n n n n n 0.25 µm Power pHEMT Technology 5.
18 GHz Frequency Range 2W Output Power 24 dB nominal Gain Quiescent Bias point : 8V ; 1A Chip size: 5.23 mm x 3.26 mm x 0.07 mm Vg Vd 50Ω IN Input matching Interstage Stage 1 / Stage 2 Interstage Stage 2 / Stage 3 Output 50Ω combiner OUT Vd Vg Vd Vg Vd Vd = 8 V Main Characteristics Tamb = +25°C (Tamb is the back-side of the chip) Symbol Parameter F_op P_sat G_lin Operating frequency range Saturated output power Linear gain Min.

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Published: Aug 16, 2010 |